Sm-Fe Thin Film Prepared by Reactive Sputtering Process
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- Tanakamaru Tempei
- Department of Applied Science, Graduate School of Engineering, Tokai University
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- Matsuoka Noriyoshi
- Department of Applied Science, Graduate School of Engineering, Tokai University
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- Takeuchi Mitsuaki
- Department of Applied Science, Graduate School of Engineering, Tokai University
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- Matsumura Yoshihito
- Department of Applied Science, School of Engineering, Tokai University
Bibliographic Information
- Other Title
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- 反応性スパッタ法によるＳｍ‐Ｆｅ超磁歪薄膜の作製
Abstract
Sm-Fe thin films as giant magnetostrictive materials were prepared by d.c. magnetron sputtering process with Ar or mixed N2-Ar sputtering gas. In X-ray diffraction patterns of the film prepared by 2.3 vol% N2-Ar as sputtering gas, diffraction peaks of SmN and Fe2N where observed. With increasing N2 gas amount, saturated magnetostriction of the Sm-Fe thin films decreased from 1400 ppm to 600 ppm. The maximum value of magnetostrictive susceptibility was showed at the film prepared by 1.0 vol% of N2-Ar gas. The film prepared by pure Ar gas showed compressive stress with 0.5 GPa. Sm-Fe thin films prepared by mixed N2-Ar gas showed about 0.7 GPa of compressive stress. Increasing of magnetostrictive susceptibility of films prepared by N2-Ar gas due to reduce of perpendicular magnetic anisotropy energy.<br>
Journal
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- Journal of the Japan Institute of Metals and Materials
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Journal of the Japan Institute of Metals and Materials 70 (8), 615-617, 2006
The Japan Institute of Metals and Materials
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Details 詳細情報について
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- CRID
- 1390001206477039616
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- NII Article ID
- 130004455732
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- ISSN
- 18806880
- 24337501
- 00214876
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed