Preparation of Bi<sub><i>x</i></sub>Sb<sub>2−<i>x</i></sub>Te<sub>3</sub> Thermoelectric Thin Films by Electrodeposition from Basic Solutions

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  • Suzuki Yuki
    School of Creative Science and Engineering, Waseda University
  • Chen Ziliang
    School of Creative Science and Engineering, Waseda University
  • Fuwa Akio
    School of Creative Science and Engineering, Waseda University

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Other Title
  • 塩基性浴での電析による Bi<sub><i>x</i></sub>Sb<sub>2−<i>x</i></sub>Te<sub>3</sub> 薄膜熱電素子の作製
  • 塩基性浴での電析によるBi[x]Sb₂₋xTe₃薄膜熱電素子の作製
  • エンキセイヨク デ ノ デンセキ ニ ヨル Bi[x]Sb ₂ ₋ xTe ₃ ハクマク ネツデンソシ ノ サクセイ
  • Preparation of BixSb2^|^minus;xTe3 Thermoelectric Thin Films by Electrodeposition from Basic Solutions

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Abstract

  Bismuth antimony telluride BixSb2−xTe3 thermoelectric thin films were prepared by electrodeposition from alkaline solution adjusted to pH=9.0 in order to inhibit hydrogen from generating. NTA (nitrile-tri-acetic acid: C6H9NO6) was used so as to increase solubility of bismuth in the alkaline solution.<br>   Electrochemical behaviors of Bi(III), Te(IV), Sb(III) and their mixtures were firstly investigated by LSV (linear sweep voltammetry) for elucidation of electrochemical condition of diffusion controlled deposition. Then, BixSb2−xTe3 electrochemical deposition experiments were conducted from the mixed solution under potential of diffusion controlled condition, i.e. −0.7 V, −0.8 V, and −0.9 V, where [Bi]/[Sb] ratio in solution was varied from 0 to 13 while keeping [Bi]+[Sb]=2 mmol/L, [Te]=1.6 mmol/L, [NTA]=0.1 mol/L and 333 K using rubber heater.<br>   Thermoelectric power properties such as semiconductor type, electric conductivity, Seebeck factor and power factor were measured and evaluated for the BixSb2−xTe3.<br>   The experiment results revealed are as follows: (1) BixSb2−xTe3 thin films can be obtained by electrochemical deposition at electric potential (−0.7~−1.0 V) under limiting current density from alkaline solution including NTA, (2) composition of films can be controlled by the mixed solution composition as well as imposed electric potential, (3) the (015) crystalline face orientation becomes stronger when absolute value of imposed potential becomes smaller, and (4) n-type semiconducting thermoelectric thin films can be prepared when x is smaller than 0.6, and p-type thin films can be prepared when x is larger than 0.6.<br>

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