四塩化珪素と水素ガスによる黄銅の滲珪素について

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  • Siliconizing of Brass with Silicon Tetrachloride and Hydrogen
  • 4エンカ ケイソ ト スイソ ガス ニ ヨル オウドウ ノ シンケイソ ニ ツイテ

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The effects of different conditions on siliconizing of brass with SiCl4 and H2 were studied and the results obtained were shown in Figs. in this paper. The larger the rate of gas flow, the higher the reaction temperature, the longer the reaction time and the higher the concentration of SiCl4, the weight change as well as the width of the penetrating layer of siliconized brass specimen becomes the greater, but at reaction temperature above 750°C the surface of siliconized specimen begins to melt. The weight change of specimen after siliconizing was in the direction of decrease,and no other compounds than ZnCl2 were detectable in reaction products. Therefore we considered that the siliconizing of brass with SiCl4 and H2 proceeds by the following reaction SiCl4+2Zn\ ightleftarrowsSi+2ZnCl2, and that the rate of siliconizing is determined by the rate of effluence of ZnCl2 from the surface of sample.

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