四塩化珪素のクロムに対する反応

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タイトル別名
  • Reaction of Chromium with Silicon Tetrachloride
  • 4エンカ ケイソ ノ クロム ニ タイスル ハンノウ

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The conditions of formation of silicides, when chromium powder or mixed powders of chromium and silicon were reacted with silicon tetrachloride gas in hydrogen, argon and nitrogen atmospheres at 800°C to 1300°C, were examined by weight changes and X-ray analysis. In hydrogen and argon atmosphere, the chromium silicides were easily produced. On the other hand, in nitrogen atmosphere, X-ray analysis showed the formation of chromium nitrides other than chromium silicides below 1000°C, and showed alone the formation of silicon nitride higher than 1200°C. A mechanism of formation of silicon nitride, when chromium powder was reacted with silicon tetrachloride in nitrogen atmosphere, was discussed.

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