Resistivity Distribution at Cross Section in a Pulled Silicon Crystal

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  • 引上シリコン単結晶の半径方向比抵抗分布
  • ヒキアゲ シリコンタンケッショウ ノ ハンケイ ホウコウヒ テイコウ ブンプ

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Abstract

To the analysis of resistivity distribution at cross section in a pulled Si crystal, the theory of effective distribution coefficient was applied.<BR>The following are illustrations of present report.<BR>(1) Solute concentration at cross section. (Experimental illustration.)<BR> (2) Analysis of concentration distribution at cross section. (On the effective distribution coefficient.)<BR>(3) Resistivity distribution at cross section of phosphorus doped Si crystals. (Experimental.)<BR>(4) Diffusion layer in the melt-solid interface. (On the calculated value with phosphorus doped Si-crystals.)<BR>(5) Resistivity distribution at cross section of boron doped Si-crystals. (Experimental.)<BR>(6) Resistivity distribution at cross section of a boron and phosphorus doped Si-crystal. (With the combination of 3 and 5.)<BR>(7) Discussion. (On the diffusion coefficients of impurities in molten Si.)<BR>The results are in agreement with another impurity doped Si-crystal in an assumption of diffusion coefficient.

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