四塩化珪素と窒素ガスによる銅の滲珪素について

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タイトル別名
  • Siliconizing of Copper with Silicon Tetrachloride and Nitrogen
  • 4エンカ ケイソ ト チッソ ガス ニ ヨル ドウ ノ シンケイソ ニ ツイテ

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Although SiCl4 vapour diluted with N2 is heated up to the temperature of 800°C with Cu, the thermal decomposition of SiCl4 as well as exchange reaction between SiCl4 and Cu do not take place, therefore “Siliconizing” is not carried is not. However, when Cu and Si-powder are placed side by side and are heated between 600°C and 800°C in an atmosphere of N2 containing SiCl4 vapour, Cu-specimen is siliconized. It is considered that SiCl4 plays the role of Si-carrier from the surface of Si to the surface of Cu by the reversible reaction (n-1)Si+(n+1)SiCl_4 \ ightleftarrows2Si_nCl_2n+2and hence the siliconizing of Cu proceeds. Effects of various conditions on siliconized amounts seem to be same as that of other cementation process, i.e. the higher the reaction temperature, the higher the concentration of SiCl4 and the longer the reaction time, the weight increase as well as the width of penetrating layer of siliconized Cu become the greater.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 23 (2), 113-116, 1959

    公益社団法人 日本金属学会

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