Spectrochemical Determination of Trace amount of Vanadium and Silicon in Titanium Tetrachloride by the Addition Method. (Application of Quantitative Spectrochemical Analysis to Titanium Refining Industry (2nd Report))

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  • 添加法によるTiCl<SUB>4</SUB>中の微量V及びSiの定量分光分析について
  • 添加法によるTiCl4中の微量VおよびSiの定量分光分析について
  • テンカホウ ニ ヨル TiCl4 チュウ ノ ビリョウ V オヨビ Si ノ テイリョウ ブンコウ ブンセキ ニ ツイテ

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Abstract

With the demand of high purity titanium sponge, the minut amounts of impurities in titanium tetrachloride have become of great significance to the titanium refining industry because small amounts of vanadium in titanium tetrachloride present as VOCl3 are deleterious to Brinell hardness of titanium metal. A spectrochemical addition method for determining V and Si covering the concentration ranges of 0.008 to 0.0008% and 0.001 to 0.0002% in titanium tetrachloride respectively, is developed. Based on statistical consideration, the optimum intensity ratio, the selection of back-ground radiation and precision of this spectrochemical addition maked are discussed. Except the intensity ratio measurement and the preparation of analytical addition curve, the excitation condition and the photographic procedures are identical with those described in our previous report.

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