Preparation of High Purity Silicon by Thermal Decomposition of Silicon Tetraiodide or the Hydrogen Reduction of Silicon Tetrachloride

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  • 沃度法およびSiCl<SUB>4</SUB>の水素還元法によるSiの化学的精製について
  • 沃度法およびSiCl4の水素還元法によるSiの化学的精製について
  • ヨードホウ オヨビ SiCl4 ノ スイソ カンゲンホウ ニ ヨル Si ノ カガクテキ セイセイ ニ ツイテ

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Abstract

The iodide process and the hydrogen reduction process of SiCl4 have been investigated as methods for preparing high purity silicon. The reactions of these processes are both heterogeneous, taking place on a hot surface. In the iodide process, the amount of Si deposition through thermal decomposition of SiI4 on the hot surface of an iodide cell consisting of a fused quartz tube was studied as a function of the four following operating variables: (a) the amount of iodine introduced in the cell, (b) the temperature of SiI4, (c) the temperature of the decomposition furnace and (d) the thermal decomposition time. In the reduction process, the yield of Si deposition through the reduction of SiCl4 by H2 on the hot surface of quartz tube in the reduction cell was studied as a function of three variables: (a) the temperature of H2-SiCl4 mixing chamber, (b) the H2 flow rate, and (c) the reduction temperature. The results of spectroscopic analysis of Si prepared by these processes are shown in Table 2. Si obtained by the reduction process show shigher purity than from the iodide process.

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