GeとIn, Pb, SnおよびBiとの合金層中に生ずる縞模様について

DOI Web Site Web Site

書誌事項

タイトル別名
  • A Study of Striation Patterns in Ge-Carrier Metal Regrowth Region
  • Ge ト In , Pb , Sn オヨビ Bi ト ノ ゴウキンソウ チュウ ニ ショウズル シマ モヨウ ニ ツイテ

この論文をさがす

抄録

Different types of striation patterns appearing in the recrystalized layers which are formed by alloying the carrier metal into a Ge wafer in a cycle of heating and cooling have been investigated by means of Cu plating and chemical etching.<BR>The carrier metals used were In, Pb, Sn and Bi, and the recrystalized layers were formed by the constitutional supercooling while the alloying of the carrier metal into the Ge single crystal wafer was performed at different temperatures and cooling rates. These striation patterns have depends on the distribution coefficient and solid solubility of the carrier metal in Ge. The mechanism of poly-crystalization of the single recrystalized layer with higher concentrations of the dope in the layer is also discussed.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 28 (9), 507-513, 1964

    公益社団法人 日本金属学会

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ