Concentration Dependence on the Chemical Diffusion Coefficient in a α Solid Solution of the Fe-Si System

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  • Mitani Hiroyasu
    Department of Metallurgy, Faculty of Engineering, Osaka University
  • Onishi Masami
    Department of Metallurgy, Faculty of Engineering, Osaka University
  • Shikano Tokuzo
    Graduate Student of Metallurgical Engineering, University of Osaka Prefecture

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  • Fe-Si系α固溶体内の化学拡散係数におよぼす濃度依存性について
  • Fe-Siケイ アルファ コヨウタイ ナイ ノ カガク カクサン ケイスウ ニ オヨボス ノウド イゾンセイ ニ ツイテ
  • Concentration Dependence on the Chemical Diffusion Coefficient in a α Solid Solution of the Fe-Si System

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The chemical diffusion coefficient in a α solid solution of the Fe-Si system obtained by Batz et al.(1) has been regarded as the most reliable value up to the present time. However, the above experiment was carried out only in a narrow range of silicon concentration from 2.3 wt% (4.5 at%) to 3.7 wt% (7.1 at%). To obtain a more reliable value of the diffusion coefficient up to a higher silicon concentration within the α phase, the present work was carried out.<BR>The former experiment was carried out using the welded diffusion couples, while the latter experiment using the siliconized couple of α Fe and α Fe3Si, where the 2.9 wt% (5.6 at%) Si containing low silicon steel was treated by the poreless siliconizing method as shown in our previous works(3)∼(9).<BR>The siliconized couples were heated at temperatures from 1130° to 1220°C, and the diffusion coefficients were calculated by the Matano method in the range of silicon concentration from 3.6 wt% (7.0 at%) to 11.7 wt% (21 at%), with correction of the diffusion time by da Silva and Mehl’s equation(15). The results obtained are as follows. <BR>(1) The minimum value of the diffusion coefficients at a given temperature is found at about 10 atomic percent silicon.<BR>(2) Both the activation energy and the frequency factor show the maximum values at 15 atomic percent silicon.<BR>(3) The diffusion coefficient at 7 atomic percent silicon is in good agreement with the result by Batz.

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