Electric Charging of Thin Insulating Film by X-Radiation
-
- Iwata Seiichi
- Central Research Laboratory, Hitachi, Ltd.
-
- Ishizaka Akitoshi
- Central Research Laboratory, Hitachi, Ltd.
Bibliographic Information
- Other Title
-
- X線照射による絶縁被膜の帯電
- Xセン ショウシャ ニヨル ゼツエン ヒマク ノ タイデン
Search this article
Abstract
This study deals with the electric charging of thin insulating films by X-radiation during ESCA measurements. The effect of charging on the value of the kinetic energy for electrons emitted from the specimen surface was obtained on the assumption that there is no charging when either the X-ray intensity or thickness of the insulating film is zero. By measuring the kinetic energy for various X-ray intensities and by extrapolating to zero intensity, it was found that the kinetic energy of C1s electrons emitted from an adsorption layer on Cu shifted to a lower value by as much as 2 eV. It was also found from the X-ray intensity or thickness dependence of the kinetic energy that the true chemical shift for Si2p electrons from 1∼5 nm-thick thermal oxide films on Si was 3.0±0.2 eV and that the effect of charging amounted to 0.5∼1.8 eV for these oxide films.
Journal
-
- Journal of the Japan Institute of Metals and Materials
-
Journal of the Japan Institute of Metals and Materials 43 (5), 388-392, 1979
The Japan Institute of Metals and Materials
- Tweet
Details 詳細情報について
-
- CRID
- 1390001206485337088
-
- NII Article ID
- 130007338831
-
- NII Book ID
- AN00187860
-
- ISSN
- 18806880
- 24337501
- 00214876
-
- NDL BIB ID
- 2052550
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed