ESCAで測定されたSi酸化膜の化学シフト

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タイトル別名
  • Chemical Shift for Thermally Oxidized Silicon as Measured by ESCA
  • ESCA デ ソクテイサレタ Si サンカ マク ノ カガク シフト

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This study concerns the measurement of the true chemical shift for Si2p electrons emitted from thermally oxidized Si. Experiments were carried out to measure the chemical shifts for 1∼5 nm-thick thermally oxidized films on Si for various X-ray exposure times, oxide thicknesses, and X-ray intensities. The Si2p chemical shift was observed to range from 3.5 to 4.8 eV for the changes in the experimental conditions just mentioned. It was found from the chemical shift measurements for various X-ray exposure times that: (1) the shift increased with the X-ray exposure time, (2) this result was reproducible for the same specimen, and (3) the same shifts in the same direction were observed for Si2p and O1s electrons. From these results, it was concluded that there was electric charging effect in the chemical shift measurements of these thin insulating films on Si. The attempts were next made to obtain the true chemical shift with the help of theoretical calculations of the charge distribution and the surface potential change caused by X-radiation. It was shown, from the extrapolation of the chemical shift value to zero oxide thickness or to zero X-ray intensity, that the true Si2p chemical shift for thin thermally oxidized Si films was 3.0 eV. This meant that the surface potential changed by 0.5∼1.8 eV due to electric charging of the oxide film during ESCA measurement.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 43 (5), 380-388, 1979

    公益社団法人 日本金属学会

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