Structural Analysis of Buried Amorphous Layer in Oxygen-Ion-Implanted Silicon Carbide

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  • 酸素イオン注入シリコンカーバイドにおける埋め込み非晶質層の構造解析
  • サンソ イオン チュウニュウ シリコンカーバイド ニ オケル ウメコミ ヒショウシツソウ ノ コウゾウ カイセキ

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Abstract

We performed oxygen-ion-implantation into silicon carbide (SiC) to produce SiC-on-insulator structures. Single crystals of 6H-SiC (0001) wafer were implanted with 180 keV oxygen ions at 923 K to fluences ranging 0.2−1.4×1018 cm−2. Microstructures of the specimens were examined using cross-sectional transmission electron microscopy and scanning transmission electron microscopy (STEM) equipped with an energy dispersive X-ray spectrometer (EDXS) and an electron energy-loss spectrometer (EELS). A continuous buried amorphous layer is formed in specimens subjected to ion fluences ≥0.4×1018 cm−2. The amorphous structures change drastically between 0.7 and 1.4×1018 cm−2. STEM-EDXS/EELS measurements show that the sample irradiated to fluences of ≤0.7×1018 cm−2 possesses a buried amorphous SiCxOy layer, and oxygen concentration peaks around the center of the buried amorphous layer. On the other hand, a well-defined SiO2 layer including self-bonded carbon atoms is formed in the crystal irradiated to a fluence of 1.4×1018 cm−2, and this amorphous layer has a layered structure due to compositional variations of silicon, carbon, and oxygen. The formation of Si-O and C-C bondings is also confirmed by pair-correlation functions extracted from Fourier transformation of nano-beam electron diffraction patterns. These results indicate that the high-dose oxygen-ion-implantation is a viable means to produce SiC-on-insulator structures.

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