Use of SIMS to Determine Pure and Oxidized Elements in a Solid Surface

DOI Web Site Web Site
  • Kusao Kenji
    Central Research Laboratories , Matsushita Electric Industrial Co., Ltd.
  • Yoshioka Yoshiaki
    Central Research Laboratories , Matsushita Electric Industrial Co., Ltd.
  • Konishi Fumiya
    Central Research Laboratories , Matsushita Electric Industrial Co., Ltd.

書誌事項

タイトル別名
  • Use of SIMS to Determine Pure and Oxidi

この論文をさがす

抄録

A quantitative analysis of oxidized elements in a solid surface which consists of and oxidized element has been studied using a SIMS equipped with a quadrupole mass filter. The apparatus is able to introduce gas into the specimen chamber in amounts high as 1×10-3 Torr without any problems for the primary beam system and the analyzer system by means of differential pumping techniques. The standard sample(Al, Si)composed of a pure and oxidized element is prepared by the method used for fabricating microelectronic devices. Ions such as Al+and Si+emitted from standard samples are represented by the linear superposition of ions emitted from the pure and oxidized element. The concentration of the oxidized element is determined by the ratio of the secondary ion intensity on exposure to oxygen to that on non-exposure to oxygen.

収録刊行物

  • 質量分析

    質量分析 25 (4), 305-313, 1977

    一般社団法人 日本質量分析学会

詳細情報 詳細情報について

問題の指摘

ページトップへ