Oxide-Ion Conduction, Average and Local Structures of LaSrGa₁-xMg[x]O₄-δ with Layered Perovskite Structure
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- KITAMURA Naoto
- Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science Division of Ecosystem Research, Research Institute for Science and Technology, Tokyo University of Science
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- HAMAO Naoki
- Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science
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- VOGEL Sven C.
- LANSCE Lujan Center, Los Alamos National Laboratory
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- IDEMOTO Yasushi
- Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science Division of Ecosystem Research, Research Institute for Science and Technology, Tokyo University of Science
書誌事項
- タイトル別名
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- Oxide-Ion Conduction, Average and Local Structures of LaSrGa<sub>1−x</sub>Mg<sub>x</sub>O<sub>4−δ</sub> with Layered Perovskite Structure
- Oxide-Ion Conduction, Average and Local Structures of LaSrGa1^|^minus;xMgxO4^|^minus;^|^delta; with Layered Perovskite Structure
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In this work, we prepared LaSrGa1−xMgxO4−δ with the K2NiF4-type layered perovskite structure and then investigated the electrical conduction property and the crystal structure. From the conductivity measurements, it was indicated that LaSrGaO4 exhibited oxide-ion conduction by substituting Mg for Ga partially, but the conductivity of the substituted sample was lower than those of LaGaO3-based materials reported previously. In order to clarify the reason of the lower conductivity, we performed the Rietveld and Pair Distribution Function (PDF) analyses using neutron scattering data, and also carried out first principle calculation as a theoretical approach. As a result, it was indicated the material had a two-dimensional oxide-ion conduction pathway and the oxygen vacancy tended to be localized at the corner sharing position of GaO6 within the perovskite layer. In addition, it was suggested that the low ionic conductivity in the LaSrGaO4-based materials were caused by a large distortion around the defect and a large repulsive force between the oxygen vacancy and La3+.
収録刊行物
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- Electrochemistry
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Electrochemistry 81 (6), 448-453, 2013
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詳細情報 詳細情報について
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- CRID
- 1390001206498400896
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- NII論文ID
- 10031159260
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- NII書誌ID
- AN00151637
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- ISSN
- 21862451
- 13443542
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- NDL書誌ID
- 024525394
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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