Fabrication of Dye-doped Polymer Organic Light-Emitting Devices using Tin-doped Indium Oxide Anodes Deposited by Spray-CVD

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  • SEKI Shigeyuki
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University
  • UEDA Kenji
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University
  • TSUBOKAWA Katsuhide
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University
  • KONDO Takeshi
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University
  • WANG Meihan
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University
  • UCHIDA Takayuki
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University
  • OHTSUKA Masao
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University
  • SAWADA Yutaka
    Department of Media and Image Technology, Graduate School of Engineering, Tokyo Polytechnic University

Bibliographic Information

Other Title
  • スプレーＣＶＤ法で成膜したＩＴＯ膜を陽極に用いた色素分散型高分子有機ＥＬ素子の作製と評価
  • スプレー CVDホウ デ セイマク シタ ITO マク オ ヨウキョク ニ モチイタ シキソ ブンサンガタ コウブンシ ユウキ EL ソシ ノ サクセイ ト ヒョウカ

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Description

Some dye-doped polymer organic light-emitting devices (polymer-OLED) were fabricated using poly (9-vinylcarbazole) (PVCz), 2,5-di (1-naphthyl) -1,3,4-oxadiazole (BND), 5,6,11,12-tetraphenyltetracene (Rubrene), and 4- (dicyanomethylene) -2-t-butyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as the emitting layer. A tin-doped indium oxide film deposited on a glass substrate by the unique spray-CVD was used as the anode. The highest luminance was approximately 400 cd/m2 when Rubrene was used as an emitting-assist dopant. The threshold voltage of the device was 6.5V.

Journal

  • KOBUNSHI RONBUNSHU

    KOBUNSHI RONBUNSHU 63 (10), 691-695, 2006

    The Society of Polymer Science, Japan

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