Significance of Interface Engineering on Device Efficiency and Stability of Organic Light-Emitting Diodes

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  • Murata Hideyuki
    School of Materials Science, Japan Advanced Institute of Science and Technology
  • Matsushima Toshinori
    School of Materials Science, Japan Advanced Institute of Science and Technology

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Other Title
  • 耐久性にすぐれた有機エレクトロルミネッセンス素子を実現する界面制御技術
  • タイキュウセイ ニ スグレタ ユウキ エレクトロルミネッセンス ソシ オ ジツゲン スル カイメン セイギョ ギジュツ

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We demonstrated a marked improvement in performance of organic light-emitting diodes (OLEDs) by interfacial engineering at electrode/organic and organic/organic heterojunction interfaces. The use of an ultrathin 0.75-nm-thick MoO3 layer between indium tin oxide (ITO) and N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD) drastically decreased the driving voltage of OLEDs and prevented OLED degradation at an ITO/α-NPD interface. We presented that the insertion of a thin 5-nm-thick mixed layer of α-NPD and tris(8-hydroxyquinoline) aluminum (Alq3) reduced the driving voltage and enhanced the OLED stability as well. The decrease in driving voltage may reduce the probability of the generation of Joule heat and improve the stability of OLED.

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