Growth of high-quality <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> homoepitaxial layers by halide vapor phase epitaxy
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- KUMAGAI Yoshinao
- Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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- MURAKAMI Hisashi
- Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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- KURAMATA Akito
- Tamura Corporation
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- HIGASHIWAKI Masataka
- National Institute of Information and Communications Technology (NICT)
Bibliographic Information
- Other Title
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- HVPE法による高品質酸化ガリウムエピタキシャル成長技術
- HVPEホウ ニ ヨル コウヒンシツ サンカ ガリウムエピタキシャル セイチョウ ギジュツ
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Abstract
<p>Homoepitaxial growth of β-Ga2O3 layers was investigated using an atmospheric-pressure halide vapor phase epitaxy (HVPE) method using gallium monochloride (GaCl) and oxygen (O2) source gases and a nitrogen (N2) carrier gas. On β-Ga2O3 (001) substrates prepared by the edge-defined film-fed growth (EFG) method, high crystalline quality and purity homoepitaxial layers could be grown at 1000°C with high growth rates of up to 20μm/h. The HVPE grown layers showed a low effective donor concentration (Nd-Na) of below 1013cm-3. By intentional Si doping using SiCl4 doping gas, thick homoepitaxial layers with a controlled n-type carrier concentration in the range of 1015-1019cm-3, which was almost the same as the Si impurity concentration, were successfully prepared.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 86 (2), 107-111, 2017-02-10
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390001277355145472
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- NII Article ID
- 130007715484
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- NII Book ID
- AN00026679
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- ISSN
- 21882290
- 03698009
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- NDL BIB ID
- 027997872
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed
