Recent progress and future prospects of AlGaN-based deep-UV LEDs

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  • AlGaN系深紫外LEDの進展と展望
  • AlGaNケイ シンシガイ LED ノ シンテン ト テンボウ

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Abstract

<p>We demonstrated 220-350-nm-band AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). Low threading-dislocation density (TDD) AlN buffer layers were realized by using an ammonia (NH3) pulse-flow multilayer (ML) growth technique. We achieved a significant increase in the internal quantum efficiency (IQE) of AlGaN quantum well (QW) emission from about 0.5% to more than 50% by reducing the TDD. We also achieved a significant increase in electron injection efficiency (EIE) by introducing multiquantum barriers (MQBs). We then obtained about 4% external quantum efficiency (EQE) and 30mW cw output power for sterilization-use wavelength DUV LEDs.</p>

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  • Oyo Buturi

    Oyo Buturi 80 (4), 319-324, 2011-04-10

    The Japan Society of Applied Physics

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