Current status and future of the hydride vapor phase epitaxy of nitride semiconductors

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  • KOUKITU Akinori
    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology

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  • 窒化物半導体のハイドライド気相成長技術の現状と課題
  • チッカブツ ハンドウタイ ノ ハイドライド キソウ セイチョウ ギジュツ ノ ゲンジョウ ト カダイ

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Abstract

<p>The vapor phase epitaxy of nitride semiconductors is described. Investigation of the mechanism and thermodynamic analyses of hydride vapor phase epitaxy are carried out to understand HVPE growth. In addition, the thermodynamic analysis of a new HVPE technique using group III trichlorides, such as AlCl3, GaCl3 and InCl3, is discussed. The equilibrium partial pressures of gaseous species and the driving force for deposition are calculated and used as growth conditions. It is shown that the deposition of AlN and InN is possible by using group III trichlorides, although the HVPE growth is very difficult using group III monochlorides, such as AlCl and InCl. Furthermore, it is shown that the HVPE of AlGaN and InGaN is possible using group III trichlorides and a significantly large driving force for AlN, GaN and InN deposition is provided.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 81 (6), 471-478, 2012-06-10

    The Japan Society of Applied Physics

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