Characterization of point defects in GaN

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  • TOKUDA Yutaka
    Department of Electrical and Electronics Engineering, Aichi Institute of Technology

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  • GaN中の点欠陥評価
  • GaN チュウ ノ テン ケッカン ヒョウカ

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Abstract

<p>In order to study point defects in semiconductors, evaluation methods based on the junction capacitance transients due to carrier emission from filled traps are often employed. Among various methods, deep level transient spectroscopy (DLTS) is a powerful tool to detect traps because of its ease of analysis, its ability to separate traps, and its high detection sensitivity. DLTS has been used to observe traps in semiconductors such as Si, GaAs and A1GaAs. Recently, GaN has received much attention for the application of high-power electronic devices. In this paper, we present recent results on the characterization of traps in GaN using DLTS.</p>

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  • Oyo Buturi

    Oyo Buturi 82 (10), 862-865, 2013-10-10

    The Japan Society of Applied Physics

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