書誌事項
- タイトル別名
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- Low–pressure Deposition of CoPtCr–SiO<sub>2</sub> Granular Films by Ar＋O<sub>2</sub> Reactive Sputtering Using CoPtCrSi Target
- CoPtCrSiターゲットの酸素リアクティブスパッタリングによるCoPtCr–SiO₂グラニュラー薄膜の低ガス圧成膜
- CoPtCrSi ターゲット ノ サンソ リアクティブスパッタリング ニ ヨル CoPtCr – SiO ₂ グラニュラー ハクマク ノ テイガスアツセイマク
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抄録
<p>To improve the surface flatness, impact and corrosion resistance of magnetic recording media, low–pressure (0.6 Pa) deposition of CoPtCr–SiO2 granular films by Ar＋O2 reactive sputtering using a Co65Pt14Cr9Si12 target was investigated. It was found that as the fraction of oxygen in the sputtering gas flow (FO2) was increased from 0 to 20%, the deposition rate increased from 2.8 to 4.3 nm/s, and then decreased to 1.1 nm/s as FO2 was further increased. For FO2＝10–12%, the designed composition with the desired oxygen content (Co74Pt16Cr10–8 mol%SiO2) could be achieved. For FO2＝8%, while a flat surface granular film with c-plane oriented CoPtCr grains was realized, a slight amount of Si remaining in magnetic grains which indicated the insufficient segregation of SiO2 into the grain boundaries was observed.</p>
収録刊行物
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- 表面と真空
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表面と真空 61 (7), 469-473, 2018-07-10
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001288043544192
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- NII論文ID
- 130007403878
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- NII書誌ID
- AA12808657
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- ISSN
- 24335843
- 24335835
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- NDL書誌ID
- 029131179
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可