Interfacial Engineering of Perovskite Quantum-Dot Light-Emitting Devices Using Alkyl Ammonium Salt Layer
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- Ebe Hinako
- Graduate School of Organic Materials Science, Yamagata University
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- Takahashi Yoshihito
- Graduate School of Organic Materials Science, Yamagata University
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- Sato Jun
- Graduate School of Organic Materials Science, Yamagata University
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- Chiba Takayuki
- Graduate School of Organic Materials Science, Yamagata University
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- Ohisa Satoru
- Graduate School of Organic Materials Science, Yamagata University
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- Kido Junji
- Graduate School of Organic Materials Science, Yamagata University
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Herein, we demonstrated that alkyl ammonium salts containing the Br anion, oleylamine bromide (OAM-Br), was used as an interfacial engineering layer between the hole transport layer (HTL) and the perovskite QDs to passivate cation- and anion-defects in perovskite QDs. The OAM-Br interfacial layer enables a high PLQY due to the suppression of surface defects in perovskite QDs. Thus, the CsPbBr3 QD-LEDs with an OAM-Br layer exhibited a maximum power efficiency of 3.35 lm/W and an external quantum efficiency (EQE) of 2.08% that which are higher efficiencies than those of the LEDs without an OAM-Br layer.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 31 (3), 329-333, 2018-06-25
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詳細情報 詳細情報について
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- CRID
- 1390001288066037760
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- NII論文ID
- 130007481499
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 029061702
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可