Study of dissociative adsorption of water molecule at kink site of kinked-GaN(001) and role of Pt catalyst using first-principles calculations
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- Hasegawa Miki
- Graduate School of Engineering,Osaka University
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- Bui Pho Van
- Graduate School of Engineering,Osaka University
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- Inagaki Kouji
- Graduate School of Engineering,Osaka University
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- Morikawa Yoshitada
- Graduate School of Engineering,Osaka University
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- Yamauchi Kazuto
- Graduate School of Engineering,Osaka University
Bibliographic Information
- Other Title
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- 第一原理計算を用いたPtとステップキンクGaN(0001)間での水分子の解離吸着の解析
Abstract
GaN enables low power consuming and high temperature operatable electronic.Recently CARE which utilizes catalyst etching reaction in water can form flat GaN surface in atomic level and it is going to be applied to fabrication of devices. In this presentation, etching processes and catalyst effects in CARE are investigated at the atomic level by means of first-principles calculations.The water dissociative adsorption process and the role of Pt catalyst on GaN surface were analyzed.
Journal
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- Abstract of annual meeting of the Surface Science of Japan
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Abstract of annual meeting of the Surface Science of Japan 2018 (0), 278-, 2018
The Japan Society of Vacuum and Surface Science
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Details 詳細情報について
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- CRID
- 1390001288093281792
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- NII Article ID
- 130007519147
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed