書誌事項
- タイトル別名
-
- Preparation of Amorphous Bismuth Oxide Films by Electrodeposition
- デンキ カガク セキシュツホウ ニ ヨル ヒショウシツ サンカ ビスマス ハクマク ノ サクセイ
この論文をさがす
抄録
<p>Amorphous bismuth oxide (Bi2O3) films have been grown on indium tin oxide (ITO) coating glass substrate by means of electrodeposition. Deposited Bi2O3 films were characterized by structure, morphology, optical properties, and ultimate analysis. X-ray diffraction (XRD) measurements revealed that Bi2O3 amorphous films were grown below 45℃ and above 3 mA cm－2. X-ray photoelectron spectroscopy (XPS) spectra showed that the amorphous films contained potassium descended from supporting electrolyte of KOH. These results suggested that the Bi2O3 films were maintained amorphous phase by inclusion of potassium acted as modified oxide. Refractive index of the Bi2O3 amorphous film grown at 45℃ and 3 mA cm－2 was 1.86, and infrared penetrability of that film was 93%.</p>
収録刊行物
-
- Electrochemistry
-
Electrochemistry 73 (12), 1030-1034, 2005-12-05
公益社団法人 電気化学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001288142858240
-
- NII論文ID
- 10016515117
-
- NII書誌ID
- AN00151637
-
- ISSN
- 21862451
- 13443542
-
- NDL書誌ID
- 7756157
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用可