Influence Evaluation of ESR Characteristics for Off-state SiC Schottky Barrier Diode on Conducted EMI Noise in a DC-DC Converter

DOI

Bibliographic Information

Other Title
  • SiCショットキーバリアダイオードの非導通時ESR特性がDC-DCコンバータの伝導性EMIノイズに与える影響評価

Abstract

Wide-bandgap semiconductors such as silicon carbide (SiC) have been developing as the material for power switching devices that allow high-power density and high-temperature operation of power converters. However, fast switching of voltages (dv/dt) and currents (di/dt) often cause electromagnetic interference (EMI) noise problems. It is necessary to understand how the switching voltage and current in power device affect EMI noise emission in order to design the power converter with fast and high-frequency switching operation. This paper focuses on static and dynamic characteristics of SiC Schottky barrier diode and evaluates its influence on conducted EMI noise in a DC-DC converter.

Journal

Keywords

Details 詳細情報について

Report a problem

Back to top