半導体デバイス配線用めっき金薄膜の力学的損傷機構の微細組織依存性

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  • 仲内 元太
    東北大学 大学院 工学研究科 ファインメカニクス専攻
  • 鈴木 研
    東北大学 大学院 工学研究科附属先端材料強度科学研究センター
  • 三浦 英生
    東北大学 大学院 工学研究科附属先端材料強度科学研究センター

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  • Microtexture Dependence of Mechanical Damage Mechanism of Electroplated Gold Thin Film Used for Semiconductor Device Interconnections

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<p>Recently, gold is expected as a new material for micro bumps in 3D integration structures because its Young’s modulus and Yield stress are lower than that of conventionally used Cu, and its CTE (Coefficient of Thermal Expansion) is closer to that of Si. In addition, since gold has high ductility, it’s appropriate for the flexible bumps. However, the micro structure of gold thin films was found to vary drastically depending on their manufacturing method and thermal history, and the mechanical properties show wide variation. Therefore, it is important to control the micro structure of gold thin films to assure the reliability of the micro bumps in semiconductor devices. Thus, in this study, uniaxial tensile test was applied to the as-electroplated and annealed copper thin films and the cross-sectional texture of the films was observed by SIM (Scanning Ion Microscope), to clarify the micro texture dependence of their mechanical properties. It was found that mechanical properties of the electroplated gold thin films varied from brittle to ductile by annealing at 400℃ for 30 minutes. However, from the observation of the cross-sectional texture, no significant change of micro texture was confirmed. Therefore, crystallinity and crystal orientation based on the order of atomic arrangement were important factors of the variation of their mechanical properties.</p>

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