[Paper] Analysis of Using Holes as Carriers in the Film in an 8K Stacked CMOS Image Sensor Overlaid with a Crystalline-Selenium Multiplication Layer
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- Arai Toshiki
- NHK Science & Technology Research Laboratories
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- Imura Shigeyuki
- NHK Science & Technology Research Laboratories
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- Watabe Toshihisa
- NHK Science & Technology Research Laboratories
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- Honda Yuki
- NHK Engineering System, Inc.
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- Mineo Keitada
- NHK Science & Technology Research Laboratories
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- Miyakawa Kazunori
- NHK Science & Technology Research Laboratories
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- Nanba Masakazu
- NHK Science & Technology Research Laboratories
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- Kubota Misao
- NHK Science & Technology Research Laboratories
説明
<p>A prototyped 8K stacked CMOS image sensor overlaid with a crystalline-selenium-based avalanche-multiplication layer, in which holes are used as traveling carriers in the film, was fabricated. Analysis of energy-band diagrams through the film to the n-type floating-diffusion region revealed that (i) large spot noise in the captured image could be suppressed and (ii) the high voltage required for avalanche multiplication could be applied to the film by using holes as carriers even when defects existed in the film. According to the results of experiments, no large spot noise occurred when the voltage applied to the film was +5 V. Additionally, the photoelectric-conversion current was increased by 1.4 times compared to the saturation-signal level when the applied voltage was +21.6 V. These results confirm charge multiplication in a crystalline-selenium-based stacked CMOS image sensor.</p>
収録刊行物
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- 映像情報メディア学会英語論文誌
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映像情報メディア学会英語論文誌 8 (4), 280-288, 2020
一般社団法人 映像情報メディア学会
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詳細情報 詳細情報について
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- CRID
- 1390004222630716288
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- NII論文ID
- 130007921456
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- ISSN
- 21867364
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可