Synthesis of High-Quality α-Ga<sub>2</sub>O<sub>3</sub> thin films on Sapphire Substrates with Introduction of Buffer Layers

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  • KANEKO Kentaro
    Engineering Education Research Center, Graduate School of Engineering, Kyoto University Photonics and Electronics Science and Engineering Center, Kyoto Univ.
  • ITO Yoshito
    Photonics and Electronics Science and Engineering Center, Kyoto Univ.
  • FUJITA Shizuo
    Photonics and Electronics Science and Engineering Center, Kyoto Univ.

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  • バッファ層導入によるサファイア基板上α-Ga<sub>2</sub>O<sub>3</sub>薄膜の高品質化
  • バッファ層導入によるサファイア基板上α-Ga₂O₃薄膜の高品質化
  • バッファソウ ドウニュウ ニ ヨル サファイア キバン ジョウa-Ga ₂ O ₃ ハクマク ノ コウヒンシツカ

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<p>Corundum-structured gallium oxide (α-Ga2O3) on sapphire substrates is advantageous in views of band gap engineering and low-cost, but heterogeneous phases and rotation domains tend to be included owing to the heteroepitaxy. The insertion of α-(AlxGa1-x)2O3 alloy buffer layers was effective for their elimination. This paper showed the elimination of heterogeneous phases (especially the β-Ga2O3 phase) and rotational domains, which have been often seen in α-Ga2O3 thin films on c-plane sapphire substrates with the use of α-(AlxGa1-x)2O3 buffer layers. These results are attributed to the stress reduction in α-Ga2O3 grown on the underlying layer. This was done without modifying the growth conditions, that is, without narrowing the windows of growth conditions. This result also suggests the important role of any buffer layers on sapphire substrates in order for further improvements of crystal quality of α-Ga2O3, leading to evolution of a variety of Ga2O3-based devices on low-cost and large-area on sapphire substrates.</p>

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