Direct Growth of Germanene at Interfaces between van der Waals Materials and Ag(111)

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  • SUZUKI Seiya
    International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS)

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Other Title
  • ファンデルワールス材料/Ag(111)界面へのゲルマネン直接成長
  • ファンデルワールス ザイリョウ/Ag(111)カイメン エ ノ ゲルマネン チョクセツ セイチョウ

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<p>Germanene, a graphene-like honeycomb crystal of germanium, has been attracting immense attention owing to its exotic properties such as a tunable bandgap and high carrier mobility. However, the fabrication of germanene-based electronic devices is difficult owing to its chemical instability. To overcome this problem, we proposed and developed a new method of germanene growth at graphene/Ag(111) and hexagonal boron nitride/Ag(111) interfaces. The grown germanene at the interfaces was stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, a vdW interface provides a nanoscale platform for growing germanene similarly to that in vacuum, while this cannot be achieved with a typical oxide interface (Al2O3). We believe that our work is of significantly importance not only for the growth of germanene but also for the fabrication of future germanene-based electronic devices.</p>

Journal

  • Vacuum and Surface Science

    Vacuum and Surface Science 64 (8), 358-363, 2021-08-10

    The Japan Society of Vacuum and Surface Science

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