書誌事項
- タイトル別名
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- Effect of External Gate-Emitter Capacitance on Turn-Off Loss of IGBT Devices
抄録
<p>Although an external gate-emitter capacitance (CGE(ext)) has been proposed to reduce the turn-on loss of insulated-gate bipolar transistors (IGBTs), its effect on the turn-off loss (Eoff) has not been investigated in detail. In this study, the effect of CGE(ext) on Eoff in an IGBT was investigated. In the case of a relatively low gate resistance (RG), CGE(ext) does not affect Eoff; thus, the turn-off behavior is independent of CGE(ext) and RG. In contrast, in the case of a relatively high RG, CGE(ext) affects Eoff. When CGE(ext) is connected to the input terminal of an IGBT, the dVCE/dt decreases owing to the increase in the effective gate charge (QG) due to the addition of CGE(ext), thereby increasing the value of Eoff.</p>
収録刊行物
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- 電気学会論文誌Ｄ（産業応用部門誌）
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電気学会論文誌Ｄ（産業応用部門誌） 141 (10), 846-847, 2021-10-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390008089766185344
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- NII論文ID
- 130008095908
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- ISSN
- 13488163
- 09136339
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可