Growth of Metastable α-Ga<sub>2</sub>O<sub>3</sub> Epitaxial Thin Film on Flexible Synthetic Mica by Insertion α-Fe<sub>2</sub>O<sub>3</sub> Buffer Layer
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- ARATA Yuta
- Department of Electronics, Kyoto Institute of Technology
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- NISHINAKA Hiroyuki
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology
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- SHIMAZOE Kazuki
- Department of Electronics, Kyoto Institute of Technology
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- YOSHIMOTO Masahiro
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology
Bibliographic Information
- Other Title
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- α-Fe<sub>2</sub>O<sub>3</sub>バッファ層の挿入によるフレキシブルな合成雲母基板上へのα-Ga<sub>2</sub>O<sub>3</sub>薄膜のエピタキシャル成長
- α-Fe₂O₃バッファ層の挿入によるフレキシブルな合成雲母基板上へのα-Ga₂O₃薄膜のエピタキシャル成長
- a-Fe ₂ O ₃ バッファソウ ノ ソウニュウ ニ ヨル フレキシブル ナ ゴウセイ ウンモ キバン ジョウ エ ノ a-Ga ₂ O ₃ ハクマク ノ エピタキシャル セイチョウ
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Abstract
<p>Metastable α-Ga2O3 thin films with a corundum structure were grown epitaxially on flexible synthetic mica. The κ-Ga2O3 thin films were grown in a temperature range of 450‒600 °C, without a buffer layer. In contrast, the α-Ga2O3 thin films were grown in a wider temperature range of 350‒600 °C, by inserting corundum-structured α-Fe2O3 buffer layers. X-ray diffraction (XRD) rocking curve measurements revealed that the α-Ga2O3 thin film grown at 425 °C had the highest degree of crystallinity. Cross-sectional transmission electron microscopy (TEM) observations and an XRD φ scan revealed that the epitaxial relationship between the thin film and the substrate via the buffer layer was (0001) α-Ga2O3 [11‒20] || (001) synthetic mica [100]. Furthermore, when TEM observation was performed close to the surface of the α-Ga2O3 thin film at a high magnification, a lattice image derived from the out-of-plane (0001)-plane orientation was observed. However, it was also revealed that the α-Ga2O3 thin films did not have a single crystal structure but rather an in-plane domain structure. By conducting selected area electron diffraction (SAED) at the interface area, it was determined that the α-Fe2O3 buffer layer was polycrystalline. This implies that α-Ga2O3 thin films were epitaxially grown while forming the in-plane domains on the polycrystalline buffer layers. The results of this study indicate the flexible applications of α-Ga2O3 thin films, which have significant potential for use as power sources and deep-ultraviolet devices.</p>
Journal
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- Journal of the Society of Materials Science, Japan
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Journal of the Society of Materials Science, Japan 70 (10), 738-744, 2021-10-15
The Society of Materials Science, Japan
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Details 詳細情報について
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- CRID
- 1390008299687978752
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- NII Article ID
- 130008105966
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- NII Book ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL BIB ID
- 031778765
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed
