First Principles Calculation of Electrical and Optical Properties of Cu₃AsO₄ : Promising Thin-Film Solar Cell Absorber from Nonferrous Metal Manufacturing By-Products
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- Suzuki Issei
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Kawanishi Sakiko
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Ohashi Naoki
- National Institute for Materials Science (NIMS)
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- Gomi Aiga
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Kano Junya
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Watanabe Hiroto
- Sumitomo Metal Mining Co., Ltd.
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- Asano Satoshi
- Sumitomo Metal Mining Co., Ltd.
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- Omata Takahisa
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
書誌事項
- タイトル別名
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- First Principles Calculation of Electrical and Optical Properties of Cu<sub>3</sub>AsO<sub>4</sub>: Promising Thin-Film Solar Cell Absorber from Nonferrous Metal Manufacturing By-Products
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説明
<p>The stability and electronic structure of enargite-type Cu3AsO4 were investigated through first principles calculations. Although its synthesis has not been reported to date, the calculations indicate the possibility of synthesis of enargite-type Cu3AsO4. Enargite-type Cu3AsO4 is expected to possess a 1–1.2-eV band gap and a large optical absorption coefficient comparable to those of absorber materials for thin-film solar cells such as CdTe and GaAs. Enargite-type Cu3AsO4 is also expected to exhibit both p-type and n-type conduction by appropriate impurity doping. This property will enable use of this material in a p–n homojunction. In contrast, enargite-type Cu3AsS4 exhibits p-type conduction whereas n-type conduction is not expected. The results of this study indicate that enargite-type Cu3AsO4 is very promising as an absorber material for thin-film solar cells.</p>
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 63 (1), 73-81, 2022-01-01
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390009062454816896
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- NII論文ID
- 130008134289
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- NII書誌ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 031899612
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- 本文言語コード
- en
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- データソース種別
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- NDLサーチ
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