マルチヒーターを使用した一方向性凝固法によるシリコン多結晶育成時の熱流動解析

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  • Analysis of temperature distribution while growing multi-crystalline silicon in a casting method with multi heater system
  • マルチヒーター オ シヨウシタ イチ ホウコウセイ ギョウコホウ ニ ヨル シリコン タケッショウ イクセイジ ノ ネツ リュウドウ カイセキ

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Ingot-casting method is an important method for producing high efficient solar cells with using multi-crystalline silicon. High efficient solar cells depend on the quality of the multi-crystalline silicon. However, generation of dislocation in solid is serious problem in ingot-casting method. The melt-crystal interface shape and axial temperature gradients in solid are closely connected with generation of dislocation in solid. Therefore, it is important to analyze thermal field, convection of melt and melt-crystal interface shape in the crucible to optimize ingot-casting method. 2D axisymmetric global simulation was carried out to clarify silicon crystal growth. The global model of heat transfer in the furnace includes the convective heat transfer of melt, the conductive heat transfer in all components, and the radiative heat transfer among all components in the furnace. We used three types of heat system by using two of three heaters. Distribution of power in the heaters was modified to study how such distribution modifies the temperature distribution. We changed position of heater1 and length of heater2 to study the effect of distance between position of three heaters and the melt-crystal interface. We studied the effect of which heaters we used, input heater power distribution and difference of position in three heaters on the melt-crystal interface shape, the thermal field and convection of melt in the crucible.

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