Annealing Dependence of Coercivity, Anisotropy Magnetic Field and Resistivity for Amosrphous CoZrNb Films Deposited by DC Planar Magnetron Sputtering

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タイトル別名
  • DC プレーナマグネトロン スパッタホウ ニ ヨル アモルファス CoZrNb
  • DCプレーナマグネロンスパッタ法によるアモルファスCoZrNb膜の保磁力,異方性磁界と抵抗率のアニール効果依存性

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説明

Amorphous CoZrNb films have been deposited by the magnetron sputtering which can highly improve the utilization efficiency of magnetic alloy target with high permeability. The saturation magnetization 4πMs of the CoZrNb films was about 14 kG. The easy and hard directions for magnetizing the films were orthogonally arranged each other in the film plane. The coercivity Hc in the easy and hard directions decreased from 0.9 to 0.2 Oe with annealing in the rotating DC magnetic field H_A. However, He increased drastically to 20 Oe by heating at the annealing temperature T_A of 400℃. With increasing T_A and H_A, the anisotropy magnetic field Hk gradually decreased from 12 to 1 Oe and the resistivity ρ also decreased from 200 to 150 μΩ-cm. Consequently, it was found that Hc and ρ depended strongly on T_A and Hk had definite relationships with both of T_A and H_A.

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