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- SHIGESATO Yuzo
- Graduate School of Science and Engineering, Aoyama Gakuin University
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- OKA Nobuto
- Faculty of Humanity-Oriented Science and Engineering, Kindai University
Bibliographic Information
- Other Title
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- 透明導電膜スパッタ成膜プロセスの基礎
- トウメイ ドウデンマク スパッタセイマク プロセス ノ キソ
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Description
<p>In order to deposit high-quality transparent conductive oxide (TCO) films, the crystallinity and stoichiometry of the films should be optimized precisely. The dc sputter deposition processes using the slightly reduced targets or using metallic targets with the specially designed feed-back systems enable us to deposit the low resistivity TCO films stably with high reproducibility. In such reactive sputtering processes, the feed-back systems of discharge impedance or plasma emission intensity combined with mid-frequency pulsing (50 kHz) are quite effective. The various high-quality TCOs, such as Sn-doped In2O3 (ITO), Al-doped ZnO (AZO), Nb-doped TiO2 (NTO), Sb or Ta-doped SnO2 (ATO or TTO) films can be successfully deposited using In-Sn, Zn-Al, Ti-Nb, Sn-(Sb or Ta) alloy targets, respectively.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 91 (3), 160-163, 2022-03-01
The Japan Society of Applied Physics