Growth and characterization of vertical p-type GaN Schottky barrier diodes
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- Ueno Kohei
- IIS, The Univ. of Tokyo
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- Shibahara Keita
- IIS, The Univ. of Tokyo
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- Kobayashi Atsushi
- IIS, The Univ. of Tokyo
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- Fujioka Hiroshi
- IIS, The Univ. of Tokyo
Bibliographic Information
- Other Title
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- 低濃度p型GaN縦型ショットキーバリアダイオード構造の作製と評価
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.2 (0), 2055-2055, 2020-08-26
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390010457664461056
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC