Investigation into the high permittivity [(K<sub>0.5</sub>Bi<sub>0.5</sub>)<i><sub>x</sub></i>Bi<sub>1−</sub><i><sub>x</sub></i>](W<i><sub>x</sub></i>V<sub>1−</sub><i><sub>x</sub></i>)O<sub>4</sub> (0 ≤ <i>x</i> ≤ 0.1) ceramic sintered at low temperature

DOI Web Site 参考文献21件
  • Yuan Xiaofeng
    School of Materials Science and Engineering, Anyang Institute of Technology State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University
  • Wei Yixuan
    School of Foreign Languages, Anyang Institute of Technology
  • Liu Hongliang
    School of Materials Science and Engineering, Anyang Institute of Technology
  • Chang Pengpeng
    School of Materials Science and Engineering, Anyang Institute of Technology
  • Zhou Ying
    School of Materials Science and Engineering, Anyang Institute of Technology
  • Gao Qianqian
    School of Materials Science and Engineering, Anyang Institute of Technology

抄録

<p>The high-k [(K0.5Bi0.5)xBi1−x](WxV1−x)O4 (0 ≤ x ≤ 0.1) ceramic was prepared via the modified solid-state reaction method. When x = 0.1, the monoclinic scheelite structure was obtained at low sintering temperature. However, when x = 0.2, the impurity phase was found. After being sintered at 650 °C for 6 h, the [(K0.5Bi0.5)0.1Bi0.9](W0.1V0.9)O4 ceramic possesses the best properties with a relative permittivity of 78.7, Q × f value of 7210 GHz and a temperature coefficient of +163 ppm/°C at the frequency of 4.11 GHz. Compared with the result of the pure BiVO4 ceramic, the sintering temperature dropped from 740 to 650 °C and the relative permittivity was increased from 67.8 to 78.7. Due to the high relative permittivity and the low sintering temperature, the [(K0.5Bi0.5)0.1Bi0.9](W0.1V0.9)O4 ceramic is potential to realize the miniaturization in communication application.</p>

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