Epitaxial growth of superconducting NbN on wide-bandgap AlN

DOI

Bibliographic Information

Other Title
  • AlNワイドギャップ半導体上へのNbN超伝導体エピタキシャル成長

Abstract

<p>Niobium nitride (NbN) is a superconducting material used in single photon detectors and quantum bits. Because NbN is lattice-matched to the wide-gap semiconductor AlN, it is possible to integrate the functions of nitride semiconductors and superconductors via epitaxial growth. However, the basic properties of NbN thin films epitaxially grown on nitride semiconductors are still unclear. In this article, we show the structural and electrical properties of NbN thin films grown on AlN by sputtering. We also discuss the mechanism that the difference in crystal structure between AlN and NbN leads to the formation of NbN twins.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 91 (7), 411-415, 2022-07-01

    The Japan Society of Applied Physics

Details 詳細情報について

  • CRID
    1390011108727591168
  • DOI
    10.11470/oubutsu.91.7_411
  • ISSN
    21882290
    03698009
  • Text Lang
    ja
  • Data Source
    • JaLC
  • Abstract License Flag
    Disallowed

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