High Mobility Diamond Field-Effect Transistor with a Monocrystalline h-BN Gate Dielectric
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- Sasama Yosuke
- NIMS Univ. of Tsukuba
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- Komatsu Katsuyoshi
- NIMS
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- Moriyama Satoshi
- NIMS
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- Imura Masataka
- NIMS
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- Teraji Tokuyuki
- NIMS
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- Watanabe Kenji
- NIMS
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- Taniguchi Takashi
- NIMS
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- Uchihashi Takashi
- NIMS
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- Yamaguchi Takahide
- NIMS Univ. of Tsukuba
Bibliographic Information
- Other Title
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- 単結晶h-BNを用いた高移動度ダイヤモンド電界効果トランジスタ
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.2 (0), 1402-1402, 2018-09-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390011959360610944
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC
