AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications
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- WAKEJIMA Akio
- Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology
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- BOSE Arijit
- Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology
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- BISWAS Debaleen
- Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology
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- HISHIKI Shigeomi
- SIC Division, Air Water Inc.
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- OUCHI Sumito
- SIC Division, Air Water Inc.
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- KITAHARA Koichi
- SIC Division, Air Water Inc.
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- KAWAMURA Keisuke
- SIC Division, Air Water Inc.
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説明
<p>A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.</p>
収録刊行物
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E105.C (10), 457-465, 2022-10-01
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1390012158460736128
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- ISSN
- 17451353
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
