Effects of RIE-damaged layer removal on electrical properties of AlGaN/GaN structures prepared by AlGaN regrowth on RIE-GaN surface
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- Yamamoto Akio
- Univ. of Fukui
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- Kanatani Keito
- Univ. of Fukui
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- Makino Shinya
- Univ. of Fukui
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- Kuzuhara Masaaki
- Univ. of Fukui
Bibliographic Information
- Other Title
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- RIE-GaN表面へのAlGaN直接成長によるAlGaN/GaN構造の電気的特性におけるRIE損傷層除去効果
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.1 (0), 3337-3337, 2018-03-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390012180532472448
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC