Growth and characterization of GaN nanowires (NWs) on the hole-shaped-patterned Al<sub>0.03</sub>Ga<sub>0.97</sub>N templates
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- Goto Nanami
- Meijo Univ.
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- Kim Myunghee
- Meijo Univ.
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- Shibuya Hiroki
- Meijo Univ.
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- Sasai Kohei
- Meijo Univ.
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- Kamiyama Satoshi
- Meijo Univ.
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- Takeuchi Tetusya
- Meijo Univ.
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- Iwaya Motoaki
- Meijo Univ.
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- Akasaki Isamu
- Meijo Univ. Akasaki Res. Cen., Nagoya Univ.
Bibliographic Information
- Other Title
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- ホールパタンニングAl<sub>0.03</sub>Ga<sub>0.97</sub>N基板上へのGaNナノワイヤの成長と評価
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.2 (0), 3380-3380, 2017-08-25
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390012468133668352
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC