Enhancement-mode Ga<sub>2</sub>O<sub>3</sub> MOSFETs with Si-Ion-Implanted Source and Drain
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- Wong ManHoi
- NICT
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- Nakata Yoshiaki
- NICT
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- Kuramata Akito
- Tamura Corp.
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- Yamakoshi Shigenobu
- Tamura Corp.
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- Higashiwaki Masataka
- NICT
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.1 (0), 3139-3139, 2017-03-01
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390012711638188416
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- ISSN
- 24367613
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- Text Lang
- en
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- Data Source
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- JaLC
