Characteristics of InGaN thin-film transistors on amorphous substrates
-
- Kobayashi Atsushi
- The Univ. of Tokyo
-
- Itoh Takeki
- The Univ. of Tokyo
-
- Lye Khe Shin
- The Univ. of Tokyo
-
- Ueno Kohei
- The Univ. of Tokyo
-
- Ohta Jitsuo
- The Univ. of Tokyo JST-PRESTO
-
- Fujioka Hiroshi
- The Univ. of Tokyo JST-ACCEL
Bibliographic Information
- Other Title
-
- アモルファス基板上に作製したInGaN薄膜トランジスタの特性
Journal
-
- JSAP Annual Meetings Extended Abstracts
-
JSAP Annual Meetings Extended Abstracts 2016.1 (0), 3450-3450, 2016-03-03
The Japan Society of Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390013972158394496
-
- ISSN
- 24367613
-
- Text Lang
- ja
-
- Data Source
-
- JaLC