Application of Neuromorphic Devices Using Stacked IGZO Thin Film to Intellectual Learning

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  • 積層In-Ga-Zn-O薄膜を利用したニューロモルフィックデバイスの知的学習への応用

Abstract

We have developed double layer neuromorphic devices using oxide semiconductors. Plastic properties of amorphous In-Ga-Zn-O were used as artificial synapses in a crooss-bar configuration. We have combined this artificial synapse with artificial neurons formed in FPGA in order to test its performance in pattern recognition. We have successfully demonstrated the learning process of two letter patterns by introducing modified Hebb's rule.which is suitable for electronic artificial neural networks. They are in good agreement with the simulation results. This results shows that this approach is quite useful as neuromorphic devices.

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