歪みを導入した半導体のバンドスプリットと局在準位

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タイトル別名
  • Strain-induced band splitting and localized states of semiconductor
  • ヒズミ オ ドウニュウ シタ ハンドウタイ ノ バンドスプリット ト キョクザイジュンイ

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抄録

Band splitting and localized states of diamond and silicon crystals are investigated with the use of the first principle calculation. In the diamond crystal a band splitting was observed for the band edge of both the conduction and the valence band. By the introduction of the large strain localized states were induced besides the band splitting. In the silicon crystal the width of a band split was dependent on the size and the direction of the strain. Namely, two kinds of the strain induced a different band splitting in the energy band.

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