AP-MOCVD deposition of Cu2O films using bis(2,4-pentanedionato)copper(II) as precursor
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- Teramura Mizuki
- Shibaura Inst. of Tech
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- Taniguchi Kai
- Shibaura Inst. of Tech
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- Ishikawa Hiroyasu
- Shibaura Inst. of Tech
Bibliographic Information
- Other Title
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- ビス(2,4-ペンタンジオナト)-銅(II)を用いた常圧MOCVD法によるCu2O薄膜の作製
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2014.2 (0), 4043-4043, 2014-09-01
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390014945749869312
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC