Effects and Causes of γ-ray Irradiation on CMOS Logic Circuits with Different P-type and N-type MOSFET Size Ratios

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  • P型とN型のMOSFETサイズ比が異なるCMOS論理回路への γ線照射の影響と原因

Abstract

To clarify the design method of radiation hardness CMOS integrated circuits, we irradiated CMOS ring oscillator circuits designed with different ratios of P-type to N-type MOSFET drive capability in each delay cell with γ-ray up to 10 Mrad. As a result, it was confirmed that the degrees of oscillation frequency variation depend on the balance between P-type to N-type driving capacities, and there is a size ratio with almost no variation in oscillation frequency. On the basis of this, we optimized the design and succeeded in realizing a CMOS ring oscillation IC with a small frequency variation against γ-ray irradiation.

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