Enhancement of Coercivity for Sm(Fe-Co)<sub>12</sub>-B Thin Films by Introduction of Sm Seed Layer

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  • Mori Y.
    Graduate School of Engineering, Tohoku Gakuin Univ.
  • Nakatsuka S.
    Graduate School of Engineering, Tohoku Gakuin Univ.
  • Hatanaka S.
    Graduate School of Engineering, Tohoku Gakuin Univ.
  • Doi M.
    Graduate School of Engineering, Tohoku Gakuin Univ.
  • Shima T.
    Graduate School of Engineering, Tohoku Gakuin Univ.

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  • Enhancement of coercivity for Sm(Fe-Co)₁₂-B thin films by introduction of Sm seed layer

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Abstract

<p>  To improve the coercivity of Sm(Fe-Co)12-B thin film, a Sm seed layer was introduced between a V buffer layer and a Sm(Fe-Co)12-B layer, and the thickness of the Sm(Fe-Co)12-B layer was varied. From the result of XRD patterns measured in an out-of-plane configuration, peaks from (002) and (004) of the ThMn12-type crystal structure were observed for all samples. The intensity of these peaks was reduced by decreasing the thickness of the Sm(Fe-Co)12-B layer; however, it was recovered by introducing a Sm seed layer. Although the coercivity was decreased due to the reduction in the thickness of the Sm(Fe-Co)12-B layer, a large coercivity of 1.87 T was obtained in an Al-diffused thin film, which was thinned to 50 nm while introducing a Sm seed layer.</p>

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